Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems

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dc.date.accessioned2008-02-22T21:49:11Z
dc.date.available2008-02-22T21:49:11Z
dc.date.issued2000
dc.format.extent219102 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBoguslawski, P., Rapcewicz, K., & Bernholc, J. J. (2000). Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems. Physical review. B, Condensed matter and materials physics, 61(16), 10820-10826.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/201
dc.language.isoen
dc.titleSurface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems
dc.typeArticle

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