Deposition and doping of silicon carbide by gas-source molecular beam epitaxy

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dc.date.accessioned2008-04-17T14:57:44Z
dc.date.available2008-04-17T14:57:44Z
dc.date.issued1997
dc.format.extent67232 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationKern, R. S., & Davis, R. F. (1997). Deposition and doping of silicon carbide by gas-source molecular beam epitaxy. Applied physics letters, 71(10), 1356-1358.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/595
dc.language.isoen
dc.titleDeposition and doping of silicon carbide by gas-source molecular beam epitaxy
dc.typeArticle

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