Schottky Barrier GaN FET Model Creation and Verification using TCAD for Technology Evaluation and Design.

dc.contributor.advisorDr. Mark Johnson, Committee Memberen_US
dc.contributor.advisorDr.Doug Barlage, Committee Chairen_US
dc.contributor.advisorDr. Mehmet C. Ozturk, Committee Memberen_US
dc.contributor.authorOzbek, Ayse Merveen_US
dc.date.accessioned2010-04-02T18:05:58Z
dc.date.available2010-04-02T18:05:58Z
dc.date.issued2008-04-25en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.levelthesisen_US
dc.degree.nameMSen_US
dc.description.abstracten_US
dc.identifier.otheretd-03132008-111248en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/1668
dc.rightsI hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dis sertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to NC State University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report.en_US
dc.subjectGaNen_US
dc.subjectschottkyen_US
dc.subjectMOSFETen_US
dc.subjectHFETen_US
dc.titleSchottky Barrier GaN FET Model Creation and Verification using TCAD for Technology Evaluation and Design.en_US

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