Transistor Modeling using Advanced Circuit Simulator Technology

dc.contributor.advisorMichael Steer, Committee Chairen_US
dc.contributor.advisorPaul Franzon, Committee Memberen_US
dc.contributor.advisorGriff Bilbro, Committee Memberen_US
dc.contributor.authorKriplani, Nikhil Men_US
dc.date.accessioned2010-04-02T17:54:35Z
dc.date.available2010-04-02T17:54:35Z
dc.date.issued2002-04-30en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.levelthesisen_US
dc.degree.nameMSen_US
dc.description.abstractThe advanced MOSFET model based on the Berkeley Short Channel IGFET Model (BSIM) version 4 is implemented in the circuit simulator Transim. The model is implemented as a charge controlled model using object-oriented programming and automatic differentiation. The result is a dramatically simplified approach to implementing the BSIM4 model in a simulator. The modeling technique does not use the associated discrete modeling approach commonly used in circuit simulators with the result that off-the-shelf numerical solvers can be used. The model is a simulator independent model and the same model code can be used for DC, transient and harmonic balance analysis. Implementation of the model was completed in 7 months with 17 pages of C++ code compared to the original code for the model implemented in SPICE that was 200 pages long. Results for an NMOS circuit are presented for DC and transient analysis.en_US
dc.identifier.otheretd-04262002-163736en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/303
dc.rightsI hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to NC State University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report.en_US
dc.subjectTransimen_US
dc.subjectMOSFET modelingen_US
dc.subjectBSIM4en_US
dc.titleTransistor Modeling using Advanced Circuit Simulator Technologyen_US

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