Method of forming a patterned substantially crystalline TA2O5 comprising material, and method of forming a capacitor having a capacitor dilelectric region comprising substantially crystalline TA2O5 comprising material

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dc.date.accessioned2008-10-14T15:01:23Z
dc.date.available2008-10-14T15:01:23Z
dc.date.issued2004
dc.format.extent152387 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBasceri, C., Derderian, G. J., Visokay, M. R., Drynan, J. M., & Sandhu, G. S. (2004). Method of forming a patterned substantially crystalline TA2O5 comprising material, and method of forming a capacitor having a capacitor dilelectric region comprising substantially crystalline TA2O5 comprising material. U.S. Patent No. 6,767,806. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1380
dc.language.isoen
dc.titleMethod of forming a patterned substantially crystalline TA2O5 comprising material, and method of forming a capacitor having a capacitor dilelectric region comprising substantially crystalline TA2O5 comprising material
dc.typePatent

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