Dry etching of silicon carbide

Simple item page
dc.date.accessioned2008-10-24T21:24:14Z
dc.date.available2008-10-24T21:24:14Z
dc.date.issued1991
dc.format.extent1236352 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationPalmour, J. W. (1991). Dry etching of silicon carbide. U.S. Patent No. 4981551. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1899
dc.language.isoen
dc.titleDry etching of silicon carbide
dc.typePatent

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
Dry_etching_of_silicon_carbide.pdf
Size:
1.18 MB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.76 KB
Format:
Plain Text
Description:
Download

Collections

Publications