Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application

Files

etd.pdf (3.73 MB)

Date

2007-11-29

Authors

Advisors

GERRY LUCOVSKY, Committee Co-Chair

CALTON OSBURN, Committee Co-Chair

ROBERT M. KOLBAS, Committee Member

DOUG BARLAGE, Committee Member

Keywords

HAFNIUM OXIDE, TITANIUM OXIDE, HAFNIUM SILICON OXYNITRIDE, CMOS, HIGH K, GATE DIELECTRICS

URI

http://www.lib.ncsu.edu/resolver/1840.16/5251

Degree

PhD

Discipline

Electrical Engineering

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