Method of forming a layer comprising epitaxial silicon and a field effect transistor
No Thumbnail Available
Date
2006
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
Ramaswamy, N., Sandhu, G. S., Basceri, C., & Blomiley, E. R. (2006). Method of forming a layer comprising epitaxial silicon and a field effect transistor. U.S. Patent No. 7,132,355. Washington, DC: U.S. Patent and Trademark Office.
