Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process

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dc.date.accessioned2008-02-22T23:08:37Z
dc.date.available2008-02-22T23:08:37Z
dc.date.issued2004
dc.format.extent236785 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBae, C., & Lucovsky, G. (2004). Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 22(6), 2402-2410.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/247
dc.language.isoen
dc.titleLow-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process
dc.typeArticle

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