Methods of fabricating gallium nitride microelectronic layers on silicon layers

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dc.date.accessioned2008-07-23T21:24:44Z
dc.date.available2008-07-23T21:24:44Z
dc.date.issued2003
dc.format.extent77846 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationLinthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M. (2003). Methods of fabricating gallium nitride microelectronic layers on silicon layers. U.S. Patent No. 6,602,764. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/973
dc.language.isoen
dc.titleMethods of fabricating gallium nitride microelectronic layers on silicon layers
dc.typePatent

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