Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures
| dc.date.accessioned | 2008-02-22T22:33:45Z | |
| dc.date.available | 2008-02-22T22:33:45Z | |
| dc.date.issued | 2003 | |
| dc.format.extent | 93773 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Ulrich, M. D., Hong, J. G., Rowe, J. E., Lucovsky, G., Chan, A. S. Y., Madey, T. E. (2003). Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 21(4), 1777-1782. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/228 | |
| dc.language.iso | en | |
| dc.title | Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures | |
| dc.type | Article |
