Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers

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dc.date.accessioned2008-10-14T17:25:58Z
dc.date.available2008-10-14T17:25:58Z
dc.date.issued2003
dc.format.extent152962 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationAgarwal, V. K., Derderian, G., Sandhu, G. S., Li, W. M., Visokay, M., Basceri, C., & Yang, S. (2003). Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers. U.S. Patent No. 6,596,583. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1443
dc.language.isoen
dc.titleMethods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
dc.typePatent

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