High-k gate dielectric with uniform nitrogen profile and methods for making the same
| dc.date.accessioned | 2008-10-13T21:32:44Z | |
| dc.date.available | 2008-10-13T21:32:44Z | |
| dc.date.issued | 2004 | |
| dc.format.extent | 119795 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Colombo, L., Quevedo-Lopez, M., Chambers, J. J., Visokay, M. R., & Rotondaro, A. L. (2004). High-k gate dielectric with uniform nitrogen profile and methods for making the same. U.S. Patent No. 6,809,370. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1323 | |
| dc.language.iso | en | |
| dc.title | High-k gate dielectric with uniform nitrogen profile and methods for making the same | |
| dc.type | Patent |
