Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies
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1991
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Blewer, R. S., Gullinger, T. R., Kelly, M. J., & Tsao, S. S. (1991). Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies. U.S. Patent No. 5,023,200. Washington, DC: U.S. Patent and Trademark Office.
