Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

Simple item page
dc.date.accessioned2008-10-13T17:58:05Z
dc.date.available2008-10-13T17:58:05Z
dc.date.issued1991
dc.format.extent162173 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBlewer, R. S., Gullinger, T. R., Kelly, M. J., & Tsao, S. S. (1991). Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies. U.S. Patent No. 5,023,200. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1244
dc.language.isoen
dc.titleFormation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies
dc.typePatent

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
US_5023200_A_I.pdf
Size:
158.37 KB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.76 KB
Format:
Plain Text
Description:
Download

Collections

Publications