Properties of Closed-Shell Titanium Silicate and Gallium-Containing Semiconductor Systems.

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dc.contributor.advisorDavid Aspnes, Chairen_US
dc.contributor.advisorHans Hallen, Memberen_US
dc.contributor.advisorJerry Whitten, Memberen_US
dc.contributor.advisorGerald Lucovsky, Minoren_US
dc.contributor.authorStoute, Nicholasen_US
dc.date.accepted2011-11-21en_US
dc.date.accessioned2011-11-28T06:30:26Z
dc.date.available2011-11-28T06:30:26Z
dc.date.defense2011-11-02en_US
dc.date.issued2011-11-02en_US
dc.date.released2011-11-28en_US
dc.date.reviewed2011-11-04en_US
dc.date.submitted2011-11-03en_US
dc.degree.disciplinePhysicsen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg1274en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/7354
dc.rightsen_US
dc.titleProperties of Closed-Shell Titanium Silicate and Gallium-Containing Semiconductor Systems.en_US

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