Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

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dc.date.accessioned2008-07-28T16:52:02Z
dc.date.available2008-07-28T16:52:02Z
dc.date.issued1995
dc.format.extent73265 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBaliga, B. J., & Alok, D. (1995). Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices. U.S. Patent No. 5,449,925. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1198
dc.language.isoen
dc.titleVoltage breakdown resistant monocrystalline silicon carbide semiconductor devices
dc.typePatent

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