High temperature interface layer growth for high-k gate dielectric

dc.date.accessioned2008-10-13T21:33:34Z
dc.date.available2008-10-13T21:33:34Z
dc.date.issued2005
dc.format.extent118613 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationColombo, L., Chambers, J. J., Rotondaro, A. L., & Visokay, M. R. (2005). High temperature interface layer growth for high-k gate dielectric. U.S. Patent No. 6,852,645. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1324
dc.language.isoen
dc.titleHigh temperature interface layer growth for high-k gate dielectric
dc.typePatent

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