Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

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dc.date.accessioned2008-07-24T16:58:31Z
dc.date.available2008-07-24T16:58:31Z
dc.date.issued2007
dc.format.extent70743 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationGehrke, T., Linthicum, K. J., & Davis, R. F. (2007). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 7,217,641. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1062
dc.language.isoen
dc.titlePendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby
dc.typePatent

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