Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability

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dc.date.accessioned2008-07-21T19:08:23Z
dc.date.available2008-07-21T19:08:23Z
dc.date.issued2000
dc.format.extent81811 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBaliga, B. J. (2000). Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability. U.S. Patent No. 6,023,078. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/813
dc.language.isoen
dc.titleBidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability
dc.typeArticle

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