Method for improving the sidewall stoichiometry of thin film capacitors

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dc.date.accessioned2008-10-14T17:22:19Z
dc.date.available2008-10-14T17:22:19Z
dc.date.issued2001
dc.format.extent125123 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBasceri, C. (2001). Method for improving the sidewall stoichiometry of thin film capacitors. U.S. Patent No. 6,194,229. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1439
dc.language.isoen
dc.titleMethod for improving the sidewall stoichiometry of thin film capacitors
dc.typePatent

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