Comparison of ultrathin SiO2/Si(100) and SiO2/Si(111) interfaces from soft x-ray photoelectron spectroscopy
| dc.date.accessioned | 2008-02-22T22:28:03Z | |
| dc.date.available | 2008-02-22T22:28:03Z | |
| dc.date.issued | 2006 | |
| dc.format.extent | 291365 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Ulrich, M. D., Rowe, J. E., Keister, J., Niimi, H., Fleming, L., & Lucovsky, G. (2006). Comparison of ultrathin SiO2/Si(100) and SiO2/Si(111) interfaces from soft x-ray photoelectron spectroscopy. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 24(4), 2132-2137. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/225 | |
| dc.language.iso | en | |
| dc.title | Comparison of ultrathin SiO2/Si(100) and SiO2/Si(111) interfaces from soft x-ray photoelectron spectroscopy | |
| dc.type | Article |
