Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates

dc.date.accessioned2008-10-16T18:33:50Z
dc.date.available2008-10-16T18:33:50Z
dc.date.issued2003
dc.format.extent130399 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationCroswell, R., & Dunn, G. (2003). Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates. U.S. Patent No. 6,638,872. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1695
dc.language.isoen
dc.titleIntegration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates
dc.typePatent

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