Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

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dc.date.accessioned2008-04-17T15:09:06Z
dc.date.available2008-04-17T15:09:06Z
dc.date.issued1997
dc.format.extent81104 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationNam, O.-H., Bremser, M. D., Zheleva, T. S., & Davis, R. F. (1997). Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy. Applied physics letters, 71(18), 2698-2640.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/598
dc.language.isoen
dc.titleLateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
dc.typeArticle

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