Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices

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dc.date.accessioned2008-02-23T17:01:03Z
dc.date.available2008-02-23T17:01:03Z
dc.date.issued2001
dc.format.extent210470 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationLazar, H. R., Misra, V., Johnson, R. S., & Lucovsky, G. (2001). Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices. Applied physics letters, 79(7), 973-975.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/281
dc.language.isoen
dc.titleCharacteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices
dc.typeArticle

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