Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures

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dc.date.accessioned2008-10-13T21:31:08Z
dc.date.available2008-10-13T21:31:08Z
dc.date.issued2004
dc.format.extent148306 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationNiimi, H., Khamankar, R., Chambers, J. J., Hattangady, S., & Rotondaro, A. L. (2004). Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures. U.S. Patent No. 6,780,719. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1321
dc.language.isoen
dc.titleMethod for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures
dc.typePatent

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