Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride
| dc.date.accessioned | 2008-04-17T15:23:09Z | |
| dc.date.available | 2008-04-17T15:23:09Z | |
| dc.date.issued | 1999 | |
| dc.format.extent | 87510 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Buyanova, I. A., Wagner, M., Chen, W. M., Edwards, N. V., Monemar, B., Lindstrom, J. L., Bremser, M. D., Davis, R. F., Amano, H., & Akasaki, I. (1999). Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride. Physical review. B, Condensed matter and materials physics, 60(3), 1746-1751. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/605 | |
| dc.language.iso | en | |
| dc.title | Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride | |
| dc.type | Article |
