Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics

Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics

Files

Lucovsky_2004_Journal_Vac_Sci_Tech_B_2097.pdf (120.71 KB)

Date

2004

Citation

Lucovsky, G., Maria, J. P., & Phillips, J. C. (2004). Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 22(4), 2097-2104.