Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics

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dc.date.accessioned2008-02-22T22:32:30Z
dc.date.available2008-02-22T22:32:30Z
dc.date.issued2004
dc.format.extent123612 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationLucovsky, G., Maria, J. P., & Phillips, J. C. (2004). Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 22(4), 2097-2104.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/227
dc.language.isoen
dc.titleInterfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics
dc.typeArticle

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