Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

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dc.date.accessioned2008-10-24T17:20:48Z
dc.date.available2008-10-24T17:20:48Z
dc.date.issued1996
dc.format.extent303780 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBaliga, B. J. (1996). Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein. U.S. Patent No. 5543637. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1875
dc.language.isoen
dc.titleSilicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
dc.typePatent

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