Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy

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dc.date.accessioned2008-04-17T15:15:35Z
dc.date.available2008-04-17T15:15:35Z
dc.date.issued2005
dc.format.extent1043024 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationZakharov, D. N., Liliental-Weber, Z., Wagner, B., Reitmeier, Z. J., Preble, E. A., & Davis, R. F. (2005). Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy. Physical review. B, Condensed matter and materials physics, 71(23).
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/603
dc.language.isoen
dc.titleStructural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy
dc.typeArticle

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