Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics

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dc.date.accessioned2008-02-22T23:07:29Z
dc.date.available2008-02-22T23:07:29Z
dc.date.issued2004
dc.format.extent107821 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBae, C., Krug, C., & Lucovsky, G. (2004). Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 22(6), 2379-2383.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/246
dc.language.isoen
dc.titleElectron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics
dc.typeArticle

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