Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface

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dc.date.accessioned2008-02-22T21:58:09Z
dc.date.available2008-02-22T21:58:09Z
dc.date.issued1999
dc.format.extent683795 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationRamamoorthy, M., Briggs, E. L., & Bernholc, J. (1999). Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface. Physical review. B, Condensed matter and materials physics, 60(11), 8178-8184.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/207
dc.language.isoen
dc.titleDefect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface
dc.typeArticle

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