Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same

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dc.date.accessioned2008-07-21T16:38:09Z
dc.date.available2008-07-21T16:38:09Z
dc.date.issued1997
dc.format.extent102953 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationSchetzina, J. F. (1997). Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same. U.S. Patent No. 5,670,798. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/797
dc.language.isoen
dc.titleIntegrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
dc.typePatent

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