High-K gate dielectric defect gettering using dopants

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dc.date.accessioned2008-10-13T21:38:46Z
dc.date.available2008-10-13T21:38:46Z
dc.date.issued2006
dc.format.extent135039 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationColombo, L., Chambers, J. J., & Rotondaro, A. L. (2006). High-K gate dielectric defect gettering using dopants. U.S. Patent No. 7,015,088. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1329
dc.language.isoen
dc.titleHigh-K gate dielectric defect gettering using dopants
dc.typePatent

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