Use of indium to define work function of p-type doped polysilicon

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dc.date.accessioned2008-10-13T21:31:55Z
dc.date.available2008-10-13T21:31:55Z
dc.date.issued2004
dc.format.extent134809 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationRotondaro, A. L., Chambers, J. J., & Jain, A. (2004). Use of indium to define work function of p-type doped polysilicon. U.S. Patent No. 6,803,611. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1322
dc.language.isoen
dc.titleUse of indium to define work function of p-type doped polysilicon
dc.typePatent

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