Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices
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1998
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Yang, H. Y., Niimi, H., & Lucovsky, G. (1998). Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices. Journal of applied physics, 83(4), 2327-2337.
