Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

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dc.date.accessioned2008-03-04T01:54:41Z
dc.date.available2008-03-04T01:54:41Z
dc.date.issued1998
dc.format.extent367255 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationYang, H. Y., Niimi, H., & Lucovsky, G. (1998). Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices. Journal of applied physics, 83(4), 2327-2337.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/457
dc.language.isoen
dc.titleTunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices
dc.typeArticle

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