Characterization of Hf Si Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Ge MOSFETs.

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dc.contributor.advisorGerald Lucovsky, Co-Chairen_US
dc.contributor.advisorGeorge Rozgonyi, Co-Chairen_US
dc.contributor.advisorJerome Cuomo, Memberen_US
dc.contributor.advisorDavid Aspnes, Memberen_US
dc.contributor.authorKim, Jinwooen_US
dc.date.accepted2011-11-28en_US
dc.date.accessioned2011-12-01T06:31:07Z
dc.date.available2011-12-01T06:31:07Z
dc.date.defense2011-11-04en_US
dc.date.issued2011-11-04en_US
dc.date.released2011-12-01en_US
dc.date.reviewed2011-11-08en_US
dc.date.submitted2011-11-04en_US
dc.degree.disciplineMaterials Science and Engineeringen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.descriptionNorth Carolina State University Theses Materials Science and Engineering.
dc.formatPh.D. North Carolina State University, 2011.
dc.identifier.otherdeg1303en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/7390
dc.titleCharacterization of Hf Si Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Ge MOSFETs.en_US
dcterms.extentxiii, 132 pages : illustrations (some color)

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