Gate Leakage Current in Nitride-Based HFETs.

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dc.contributor.advisorRobert Trew, Chairen_US
dc.contributor.advisorGriff Bilbro, Memberen_US
dc.contributor.advisorBrian Floyd, Memberen_US
dc.contributor.advisorClaude Reynolds Jr, Memberen_US
dc.contributor.authorGoswami, Aruneshen_US
dc.date.accepted2014-07-14en_US
dc.date.accessioned2014-07-15T09:33:59Z
dc.date.available2014-07-15T09:33:59Z
dc.date.defense2014-05-07en_US
dc.date.issued2014-05-07en_US
dc.date.released2014-07-15en_US
dc.date.reviewed2014-05-15en_US
dc.date.submitted2014-05-07en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg3490en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/9564
dc.rightsen_US
dc.titleGate Leakage Current in Nitride-Based HFETs.en_US

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