Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness
| dc.date.accessioned | 2008-02-22T23:37:55Z | |
| dc.date.available | 2008-02-22T23:37:55Z | |
| dc.date.issued | 2000 | |
| dc.format.extent | 112259 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Lucovsky, G., Wu, Y., Niimi, H., Yang, H., Keister, J., & Rowe, J. E. (2000). Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 18(4), 1163-1168. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/264 | |
| dc.language.iso | en | |
| dc.title | Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness | |
| dc.type | Article |
