Statistics for A Study on the Optimization of the Recessed Silicon Germanium Junction Parameters of p-channel MOSFETs with Channels under Uniaxial Compressive Strain
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| A Study on the Optimization of the Recessed Silicon Germanium Junction Parameters of p-channel MOSFETs with Channels under Uniaxial Compressive Strain | 12 |
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| etd.pdf | 189 |
