Statistics for Polytype Stability, Microstructural Evolution, and Impurities at the Interface of Homoepitaxial 4H-SiC(1120) Thin Films Grown via Hot-Wall Chemical Vapor Deposition.
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| Polytype Stability, Microstructural Evolution, and Impurities at the Interface of Homoepitaxial 4H-SiC(1120) Thin Films Grown via Hot-Wall Chemical Vapor Deposition. | 14 |
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