Statistics for Investigation of Low Temperature, Atomic-Layer-Deposited Oxides on 4H-SiC and their Effect on the SiC/SiO2 Interface.
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| Investigation of Low Temperature, Atomic-Layer-Deposited Oxides on 4H-SiC and their Effect on the SiC/SiO2 Interface. | 14 |
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| etd.pdf | 183 |
