Statistics for Formation of Low-Resistivity Germanosilicide Contacts to Phosporous Doped Silicon-Germanium Alloy Source/Drain Junctions for Nanoscale CMOS
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| Formation of Low-Resistivity Germanosilicide Contacts to Phosporous Doped Silicon-Germanium Alloy Source/Drain Junctions for Nanoscale CMOS | 4 |
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| December 2024 | 0 |
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| etd.pdf | 196 |
