Statistics for Enhancing Performance of SiC Planar-gate Power MOSFETs with 650 V, 1.2 kV, and 2.3 kV Blocking Voltages with Structural Modifications.
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| Enhancing Performance of SiC Planar-gate Power MOSFETs with 650 V, 1.2 kV, and 2.3 kV Blocking Voltages with Structural Modifications. | 33 |
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| August 2025 | 0 |
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| etd.pdf | 75 |
