Statistics for The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices
Total visits
| views | |
|---|---|
| The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices | 2 |
Total visits per month
| views | |
|---|---|
| January 2026 | 0 |
| February 2026 | 0 |
| March 2026 | 1 |
| April 2026 | 0 |
| May 2026 | 0 |
| June 2026 | 0 |
| July 2026 | 0 |
File Visits
| views | |
|---|---|
| lucovsky_2000_ieee_electron_device_lett_76.pdf | 119 |
